By Topic

Nonconventional quasineutral mode of carrier transport in semiconductors and semiconductor structures

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
4 Author(s)
Mnatsakanov, T.T. ; All-Russia Electrotechnical Institute, Krasnokazarmennaya 12, 111250 Moscow, Russia ; Tandoev, A.G. ; Yurkov, S.N. ; Levinshtein, M.E.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

It is demonstrated that, in addition to the well-known quasineutral modes of carrier transport, i.e., those of quasineutral diffusion and quasineutral drift, a quasineutral mode of diffusion stimulated by quasineutral drift (DSQD) is possible. An equation that describes this mode is derived and the principal specific features of the mode are examined analytically. In particular, an analytical expression for the current-voltage (I-V) characteristic is obtained for the case when just DSQD governs the carrier transport. The analytical results obtained are verified and confirmed by a detailed simulation.

Published in:

Journal of Applied Physics  (Volume:105 ,  Issue: 4 )