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Nonconventional quasineutral mode of carrier transport in semiconductors and semiconductor structures

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4 Author(s)
Mnatsakanov, T.T. ; All-Russia Electrotechnical Institute, Krasnokazarmennaya 12, 111250 Moscow, Russia ; Tandoev, A.G. ; Yurkov, S.N. ; Levinshtein, M.E.

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It is demonstrated that, in addition to the well-known quasineutral modes of carrier transport, i.e., those of quasineutral diffusion and quasineutral drift, a quasineutral mode of diffusion stimulated by quasineutral drift (DSQD) is possible. An equation that describes this mode is derived and the principal specific features of the mode are examined analytically. In particular, an analytical expression for the current-voltage (I-V) characteristic is obtained for the case when just DSQD governs the carrier transport. The analytical results obtained are verified and confirmed by a detailed simulation.

Published in:

Journal of Applied Physics  (Volume:105 ,  Issue: 4 )