By Topic

Thermal stability of Pd/Pt/Au Ohmic contacts to InAlSb/InAs heterostructures for high electron mobility transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Dormaier, R. ; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA ; Zhang, Q. ; Liu, B. ; Chou, Y.C.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3068378 

We report the thermal stability of Pd/Pt/Au Ohmic contacts to InAlSb/InAs high electron mobility transistors. An initial drop in contact resistance correlates with consumption of the InAs electron channel through reaction of both Pd and Pt with the semiconductor heterostructure during a 3 h 175 °C anneal, as determined using transmission electron microscopy. Voids form in the unreacted Pt layer after samples are aged for 1 week at 175 °C, and they grow larger when the samples are aged for 1 week at 200 °C. The contact resistance increases by more than a factor of 2 after samples are aged for 1 week at 225 °C. We discuss the degradation of the contact resistance in light of the interfacial reactions that occur during aging.

Published in:

Journal of Applied Physics  (Volume:105 ,  Issue: 4 )