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Great enhancement of pyroelectric properties for Ba0.65Sr0.35TiO3 films on Pt–Si substrates by inserting a self-buffered layer

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5 Author(s)
Wu, C.G. ; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu 610054, People’s Republic of China ; Li, Y.R. ; Zhu, J. ; Liu, X.Z.
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(100)-Ba0.65Sr0.35TiO3 (BST) films were deposited on Pt/Ti/SiO2/Si substrates using a low-temperature self-buffered layer. X-ray diffraction and atomic force microscope investigations show that the microstructure of BST films strongly depends on surface morphology of annealed self-buffered layer. The mechanism of nucleus formation and the growth initiation of BST films on self-buffered layers were proposed. It was found that the pyroelectric properties of BST films can be greatly enhanced. The pyroelectric coefficient and material merit figure of (100)-BST films are 1.16×104 μCm-2K-1 and 2.18×10-4 Pa-1/2, respectively. The detectivity of 9.4×107 cmHz1/2W-1 was obtained in the (100)-BST film capacitors thermally isolated by 500 nm SiO2 films.

Published in:

Journal of Applied Physics  (Volume:105 ,  Issue: 4 )

Date of Publication:

Feb 2009

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