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An analysis of imprinted hysteresis loops for a ferroelectric Pb(Zr,Ti)O3 thin film capacitor using the switching transient current measurements

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5 Author(s)
Kim, Gun Hwan ; Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul 151-744, Republic of Korea ; Lee, Hyun Ju ; Jiang, An Quan ; Park, Min Hyuk
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This study examined the imprint mechanism of a ferroelectric Pt/Pb(Zr,Ti)O3(150-nm-thick)/Pt capacitor using pulse switching transient current measurements. The progression of the imprint was well explained by the propagation of a localized charge injection area, where there was an increase in coercive voltage and interfacial capacitance over the entire capacitor area. The as-received samples exhibited uniform interfacial capacitance over the total area. Charge injection resulted in a more rectified remanent polarization–applied voltage relationship compared with the as-received sample. Analytic functional forms for the switching charge and local switching area were also derived.

Published in:

Journal of Applied Physics  (Volume:105 ,  Issue: 4 )