By Topic

Damage mechanisms in thin film solar cells during sputtering deposition of transparent conductive coatings

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Fan, Qi Hua ; Department of Physics and Astronomy, University of Toledo, 2801 West Bancroft Street, Toledo, Ohio 43606, USA ; Deng, Michael ; Liao, Xianbo ; Xunming Deng,

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3074328 

Amorphous silicon (a-Si) based thin film solar cell grown on flexible stainless steel substrate is one of the most promising energy conversion devices in the future. This type of solar cell uses a transparent conductive oxide (TCO) film as top electrode. It has been a widely accepted opinion that the radio frequency sputtering deposition of the TCO film produces a higher yield than direct current sputtering, and the reason is not clear. Here we show that the damage to the solar cell during the sputtering process is caused by a reverse bias applied to the n-i-p junction. This reverse bias is related to the characteristics of plasma discharge. The mechanism we reveal may significantly affect the solar cell process.

Published in:

Journal of Applied Physics  (Volume:105 ,  Issue: 3 )