By Topic

Study of LiNbO3 and LiTaO3 ferroelectric domain structures using high-resolution x-ray diffraction under application of external electric field

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Roshchupkin, D.V. ; Institute of Microelectronics Technology, RAS, 142432 Chernogolovka, Moscow District, Russia ; Irzhak, D.V. ; Antipov, V.V.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3066481 

Regular domain structures formed in ferroelectric LiNbO3 and LiTaO3 crystals by the aftergrowth thermoelectrical treatment technique were studied by high-resolution x-ray diffraction and topography under an external electric field applied to the crystals. The application of an external electric field to the crystal causes longitudinal and shift deformations due to the reverse piezoelectric effect and, as a result, inverse changes in the Bragg angle values in adjacent domains. The changes in the Bragg angle values lead to an increase in the x-ray topographic contrast of the domain structure images and allow the direction of the polar and piezoelectrically active axis in adjacent domains to be unambiguously determined. In addition, it was shown that the x-ray diffraction technique can be used to study the behavior of elastic deformations near domain boundaries under an external electric field applied to crystals.

Published in:

Journal of Applied Physics  (Volume:105 ,  Issue: 2 )