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Annealing of ion irradiated high TC Josephson junctions studied by numerical simulations

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8 Author(s)
Sirena, M. ; LPEM-CNRS, Physique Quantique, ESPCI, 10 Rue Vauquelin, 75231 Paris, France ; Matzen, S. ; Bergeal, N. ; Lesueur, J.
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Recently, annealing of ion irradiated high Tc Josephson iunctions (JJs) has been studied experimentally in the perspective of improving their reproducibility. Here we present numerical simulations based on random walk and Monte Carlo calculations of the evolution of JJ characteristics such as the transition temperature Tc and its spread ΔTc, and compare them with experimental results on junctions irradiated with 100 and 150 keV oxygen ions, and annealed at low temperatures (below 80 °C). We have successfully used a vacancy-interstitial annihilation mechanism to describe the evolution of the Tc and the homogeneity of a JJ array, analyzing the evolution of the defects density mean value and its distribution width. The annealing first increases the spread in Tc for short annealing times due to the stochastic nature of the process, but then tends to reduce it for longer times, which is interesting for technological applications.

Published in:

Journal of Applied Physics  (Volume:105 ,  Issue: 2 )

Date of Publication:

Jan 2009

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