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Free and bound exciton fine structures in AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy

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9 Author(s)
Onuma, T. ; Center for Advanced Nitride Technology (CANTech), Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan ; Shibata, T. ; Kosaka, K. ; Asai, K.
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Exciton fine structures were observed in partially polarized optical reflectance and cathodoluminescence (CL) spectra of AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy on (0001) Al2O3 substrates. A few free and four bound exciton lines were clearly resolved in the low-temperature CL spectra of the lowest threading dislocation density (∼1×108 cm-2) AlN film. From the energy difference between the ground-state and the first excited states, the hydrogenic A-exciton binding energy in the present compressively strained (Δa/a≈-1.68%) AlN was estimated to be approximately 51 meV.

Published in:

Journal of Applied Physics  (Volume:105 ,  Issue: 2 )

Date of Publication:

Jan 2009

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