Cart (Loading....) | Create Account
Close category search window
 

Free and bound exciton fine structures in AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Onuma, T. ; Center for Advanced Nitride Technology (CANTech), Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan ; Shibata, T. ; Kosaka, K. ; Asai, K.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3068335 

Exciton fine structures were observed in partially polarized optical reflectance and cathodoluminescence (CL) spectra of AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy on (0001) Al2O3 substrates. A few free and four bound exciton lines were clearly resolved in the low-temperature CL spectra of the lowest threading dislocation density (∼1×108 cm-2) AlN film. From the energy difference between the ground-state and the first excited states, the hydrogenic A-exciton binding energy in the present compressively strained (Δa/a≈-1.68%) AlN was estimated to be approximately 51 meV.

Published in:

Journal of Applied Physics  (Volume:105 ,  Issue: 2 )

Date of Publication:

Jan 2009

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.