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ZnO grown by atomic layer deposition: A material for transparent electronics and organic heterojunctions

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14 Author(s)
Guziewicz, E. ; Institute of Physics, Polish Academy of Science, 02-668 Warsaw, Poland ; Godlewski, M. ; Krajewski, T. ; Wachnicki, Ł.
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We report on zinc oxide thin films grown by atomic layer deposition at a low temperature, which is compatible with a low thermal budget required for some novel electronic devices. By selecting appropriate precursors and process parameters, we were able to obtain films with controllable electrical parameters, from heavily n-type to the resistive ones. Optimization of the growth process together with the low temperature deposition led to ZnO thin films, in which no defect-related photoluminescence bands are observed. Such films show anticorrelation between mobility and free-electron concentration, which indicates that low n electron concentration is a result of lower number of defects rather than the self-compensation effect.

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Journal of Applied Physics  (Volume:105 ,  Issue: 12 )