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Quantum control and manipulation of donor electrons in Si-based quantum computing

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4 Author(s)
Calderon, M.J. ; Instituto de Ciencia de Materiales de Madrid (CSIC), Cantoblanco, 28049 Madrid, Spain ; Saraiva, A. ; Koiller, Belita ; Das Sarma, S.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3124084 

Doped Si is a promising candidate for quantum computing due to its scalability properties, long spin coherence times, and the astonishing progress on Si technology and miniaturization in the past few decades. This proposal for a quantum computer ultimately relies on the quantum control of electrons bound to donors near a Si/barrier (e.g., SiO2) interface. We address here several important issues and define critical parameters that establish the conditions that allow the manipulation of donor electrons in Si by means of external electric and magnetic fields.

Published in:

Journal of Applied Physics  (Volume:105 ,  Issue: 12 )

Date of Publication:

Jun 2009

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