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Multiple negative differential resistances in crossed carbon nanotubes

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7 Author(s)
Al Ahmad, M. ; LAAS CNRS, 7 Avenue du Colonel Roche, 31077 Toulouse Cedex 4, France ; Dragoman, D. ; Dragoman, M. ; Plana, R.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3138815 

An oscillatory dependence of the drain current on the drain voltage is found in a nanostructure consisting of two crossing semiconductor carbon nanotubes that are suspended over a dielectric trench, which is backed by a doped silicon substrate that acts as a gate. Alternating positive and negative differential resistance regions are generated as a function of the drain-source voltage values and can be slightly shifted by the gate voltage. Moreover, the negative differential resistance is retrieved in a large bandwidth, of up to 100 MHz, when the structure is excited with ac signals.

Published in:

Journal of Applied Physics  (Volume:105 ,  Issue: 11 )

Date of Publication:

Jun 2009

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