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Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications

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10 Author(s)
Walczyk, Ch. ; IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany ; Wenger, Ch. ; Sohal, R. ; Lukosius, M.
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The conduction process as well as the unipolar resistive switching behavior of Au/HfO2/TiN metal-insulator-metal structures were investigated for future nonvolatile memory applications. With current-voltage measurements performed at different temperatures (200–400 K), the Poole–Frenkel effect as conduction process was identified. In particular, we extracted a trap energy level at Φt=0.35±0.05 eV below the HfO2 conduction band to which a microscopic origin is tentatively assigned. From current-voltage measurements of Au/HfO2/TiN structures, low-power (as low as 120 μW) resistive switching was observed. The required forming process is shown to be an energy-induced phenomenon. The characteristics include electric pulse-induced resistive switching by applying pulses up to 100 μs and a retention time upon continuous nondestructive readout of more than 104 s.

Published in:

Journal of Applied Physics  (Volume:105 ,  Issue: 11 )