Cart (Loading....) | Create Account
Close category search window

Microscopic design of GaInNAs quantum well laser diodes on ternary substrates for high-speed and high-temperature operations

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Fujisawa, T. ; NTT Photonics Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan ; Arai, M. ; Yamanaka, T. ; Kondo, Y.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Material properties of highly strained GaInNAs quantum wells grown on GaInAs or quasi-GaInAs substrates are investigated by using microscopic theory together with a band structure calculation based on ten-band kp theory specially formulated for highly strained materials. It is shown that the material gain of GaInNAs quantum wells is reduced by incorporating N into a well layer although the strain in the well layer becomes small. The reduction can be compensated by properly choosing barrier materials. The performance of laser diodes, such as characteristic temperatures T0 and differential gains, is also investigated, and the present results show that very high T0(≃140 K) and differential gain with moderate strain (≃1.6%) can be achieved by carefully designing quantum well structures, indicating the applicability of these lasers for high-temperature and high-speed operation.

Published in:

Journal of Applied Physics  (Volume:105 ,  Issue: 11 )

Date of Publication:

Jun 2009

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.