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Tunable two-dimensional plasmon resonances in an InGaAs/InP high electron mobility transistor

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3 Author(s)
Saxena, H. ; Department of Physics, University of Central Florida, Orlando, Florida 32816, USA ; Peale, R.E. ; Buchwald, W.R.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3129319 

Voltage-tunable plasmon resonances in the two-dimensional electron gas (2DEG) of a high electron mobility transistor (HEMT) fabricated from the InGaAs/InP materials system are reported. The device was fabricated from a commercial HEMT wafer by depositing source and drain contacts using standard photolithography and a semitransparent gate contact that consisted of a 0.5 μm period transmission grating formed by electron-beam lithography. Narrow-band resonant absorption of terahertz radiation was observed in transmission in the frequency range of 10–50 cm-1. The resonance frequency depends on the gate-tuned sheet charge density of the 2DEG. The observed separation of resonance fundamental from its harmonics and their shift with gate bias are compared with theory.

Published in:

Journal of Applied Physics  (Volume:105 ,  Issue: 11 )

Date of Publication:

Jun 2009

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