Cart (Loading....) | Create Account
Close category search window
 

Neutron-irradiated Schottky diodes with self-assembled InAs quantum dots: Optical and electrical properties

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Schramm, A. ; Optoelectronics Research Centre, Tampere University of Technology, 33720 Tampere, Finland ; Tukiainen, A. ; Pessa, M. ; Konetzni, C.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3126711 

The effect of neutron irradiation on optical and electrical properties of self-assembled InAs/GaAs quantum dots (QDs) is studied for neutron doses up to Φn=3×1014 cm-2. The QDs are embedded in n-type GaAs Schottky diodes grown by molecular beam epitaxy on GaAs(001). We observe an initial increase in QD photoluminescence followed by a decrease as a function of neutron irradiation. The increase in photoluminescence is attributed to a more effective carrier trapping and relaxation from the wetting layer into the QDs via radiation-induced defects. The losses of photoluminescence at higher neutron doses are caused by defects, which act as nonradiative recombination centers. The observed dependence of the photoluminescence on the laser excitation power can be explained with saturation effects. Deep level transient spectroscopy experiments reveal multiple overlapping electron traps. Furthermore, an enhanced introduction of defects in the QD layer is observed. Electrical characterization of the Schottky diodes via capacitance-voltage spectroscopy reveals that the doping condition in the diodes changes due to the introduction of defects. This fact has to be taken into account if QDs are used in electrical devices in radiation-harsh environments as it is shown by low-temperature deep level transient spectroscopy experiments on electron emission processes from QD levels.

Published in:

Journal of Applied Physics  (Volume:105 ,  Issue: 10 )

Date of Publication:

May 2009

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.