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Reliability characterization of stress-induced charge trapping in HfO2 by electrostatic discharge impulse stresses

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3 Author(s)
Chen, Chun-heng ; Department of Electrical Engineering and Institute of Electronics Engineering, National Tsing-Hua University, Hsinchu, Taiwan 300, Republic of China ; Hwang, Huey-liang ; Chiu, Fu-Chien

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The charge trapping characteristics of HfO2 dielectric under the electrostatic discharge (ESD) high-field current impulses were studied. It is found that the charge trapping phenomenon is different from that of the conventional dc stress. The results show the interface-trapped charges are built at the low stress regime, but the positive oxide-trapped charges are rapidly built up while increasing the stress voltage, which eventually dominates the oxide breakdown. The origin of the positive oxide-trapped charges at the medium stress regime is most likely the hole trapping. At high stress regime, the main contribution of the positive oxide-trapped charges results from the electric-field enhanced defect generation. Using the Fowler derivative method, the degradation characteristics of HfO2 oxides under the ESD stress are investigated. Compared with SiO2, the severer ESD-induced charge trapping in HfO2 dielectric is observed which can be elucidated by the inherent bonding nature of metal oxide.

Published in:

Journal of Applied Physics  (Volume:105 ,  Issue: 10 )