By Topic

Reliability characterization of stress-induced charge trapping in HfO2 by electrostatic discharge impulse stresses

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Chen, Chun-heng ; Department of Electrical Engineering and Institute of Electronics Engineering, National Tsing-Hua University, Hsinchu, Taiwan 300, Republic of China ; Hwang, Huey-liang ; Chiu, Fu-Chien

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The charge trapping characteristics of HfO2 dielectric under the electrostatic discharge (ESD) high-field current impulses were studied. It is found that the charge trapping phenomenon is different from that of the conventional dc stress. The results show the interface-trapped charges are built at the low stress regime, but the positive oxide-trapped charges are rapidly built up while increasing the stress voltage, which eventually dominates the oxide breakdown. The origin of the positive oxide-trapped charges at the medium stress regime is most likely the hole trapping. At high stress regime, the main contribution of the positive oxide-trapped charges results from the electric-field enhanced defect generation. Using the Fowler derivative method, the degradation characteristics of HfO2 oxides under the ESD stress are investigated. Compared with SiO2, the severer ESD-induced charge trapping in HfO2 dielectric is observed which can be elucidated by the inherent bonding nature of metal oxide.

Published in:

Journal of Applied Physics  (Volume:105 ,  Issue: 10 )