By Topic

Anomalous temperature dependence of diode saturation currents in polycrystalline silicon thin-film solar cells on glass

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Wong, J. ; Photovoltaics Centre of Excellence, The University of New South Wales, Sydney, New South Wales 2052, Australia ; Huang, J.L. ; Kunz, O. ; Ouyang, Z.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Temperature dependent Suns-Voc measurements are performed on four types of polycrystalline silicon thin-film solar cells on glass substrates, all of which are made by solid phase crystallization/epitaxy of amorphous silicon from plasma enhanced chemical vapor deposition or e-beam evaporation. Under the two-diode model, the diode saturation currents corresponding to n=1 recombination processes for these polycrystalline silicon p-n junction cells follow an Arrhenius law with activation energies about 0.15–0.18 eV lower than that of single-crystal silicon p-n diodes of 1.206 eV, regardless of whether the cells have an n- or p-type base. This discrepancy manifests itself unambiguously in a reduced temperature sensitivity of the open-circuit voltage in thin-film polycrystalline silicon solar cells compared to single-crystal silicon cells with similar voltages. The physical origin of the lowered activation energy is attributed to subgap levels acting either as minority carrier traps or shallow recombination centers.

Published in:

Journal of Applied Physics  (Volume:105 ,  Issue: 10 )