By Topic

Effect of grain boundary on local surface conductivity of diamond film

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Li, Y.L. ; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China ; Li, J.J. ; Xia, X.X. ; Lu, C.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3056381 

In this article, the direct experimental evidences to determine the effect of grain boundary on local surface conductivity (SC) of diamond films were provided by the measurement using double probe scanning electron microscopy (SEM) technology. Undoped diamond films with (001) orientation were first grown by microwave plasma enhanced chemical vapor deposition and were then hydrogenated at different conditions for SC measurement. In the SEM system, double probes with tiny tip radius severed as two leads were moved along and contacted with the diamond film surface to directly test the local SC of diamond film. The surface electrical property results indicate that for the same distance between the two probes, the local SC of the area across grain boundary is much higher than that of area without grain boundary for the same duration of hydrogenation degrees. In addition, local SC of the area between the two probes increases with the number of grain boundaries in this area, which demonstrates that the grain boundaries play an important role in improving the SC of diamond film. The contribution of the grain boundaries on the local SC of diamond film can be mainly attributed to the defects in grain boundaries that can effectively improve electron transport ability at the diamond film surface.

Published in:

Journal of Applied Physics  (Volume:105 ,  Issue: 1 )