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Influence of perpendicular magnetic anisotropy on spin-transfer switching current in CoFeB/MgO/CoFeB magnetic tunnel junctions

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7 Author(s)
Yakata, S. ; National Institute of Advanced Industrial Science and Technology (AIST), Umezono 1-1-1, Central 2, Tsukuba, Ibaraki 305-8568, Japan ; Kubota, H. ; Suzuki, Y. ; Yakushiji, K.
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We investigated the spin-torque diode effect in submicron-scale Co60Fe20B20/MgO/(CoxFe1-x)80B20 (0≤x≤0.9) magnetic tunnel junctions (MTJs) under perpendicular magnetic fields Hext up to 10 kOe. A single peak was clearly observed in every spin-torque diode spectrum and the dependence of resonant frequency fres on Hext was well explained by using Kittel’s formula. It was found that effective demagnetizing fields in the perpendicular-to-plane direction of the Fe-rich CoFeB free layers obtained from the spectra were considerably smaller than those expected from the magnetizations of the free layers. This suggested that the Fe-rich CoFeB free layers exhibited a perpendicular magnetic anisotropy, which agreed well with the reduced switching current density in the MTJs.

Published in:

Journal of Applied Physics  (Volume:105 ,  Issue: 7 )

Date of Publication:

Apr 2009

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