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Spin-transfer induced switching in nanomagnetoresistive devices composed of Co/Pt multilayers with perpendicular magnetic anisotropy

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4 Author(s)
Park, Jeong-Heon ; Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, USA ; Moneck, M.T. ; Park, Chando ; Zhu, Jian-Gang

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We demonstrate spin-transfer switching of nanomagnetic devices composed of Co/Pt multilayer electrodes with perpendicular magnetic anisotropy. In order to obtain highly spin-polarized current, we have proposed the adoption of thick Co adjacent layers. The film stack has been optimized so that two different Co/Pt multilayer electrodes switch separately, with each having narrow switching field distribution. Detrimental effects of surface roughness have been observed and minimized to achieve well-defined switching behavior. Diverse nanopillar devices fabricated by e-beam lithography and subsequent processes show well-defined single step switching in both perpendicular field and injected current applications. The critical current density obtained is comparable to that of Co/Ni electrode based devices, indicating enhanced spin-transfer efficiency.

Published in:

Journal of Applied Physics  (Volume:105 ,  Issue: 7 )