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Tunnel magnetoresistance effect in magnetic tunnel junctions using epitaxial Co2FeSi Heusler alloy electrode

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4 Author(s)
Oogane, Mikihiko ; Department of Applied Physics, Graduate School of Engineering, Tohoku University, Aoba-yama 6-6-05, Sendai 980-8579, Japan ; Shinano, Masatsugu ; Sakuraba, Yuya ; Ando, Yasuo

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Magnetic tunnel junctions (MTJs) using epitaxially grown (100)-oriented and (110)-oriented Co2FeSi Heusler alloy bottom electrodes and amorphous Al-oxide barriers were fabricated. The tunnel magnetoresistance (TMR) ratios were 80% at 2 K and 48% at room temperature for the MTJ with the (100)-Co2FeSi bottom electrode. The MTJ with the (100)-Co2FeSi bottom electrode had a smaller TMR ratio than the MTJ with (100)-Co2FeSi electrode. The TMR ratio in MTJs with Co2FeSi electrode is smaller than that of a MTJ with Co2MnSi electrode. Tunnel conductance characteristics were investigated, revealing no half-metallic character in MTJs with Co2FeSi electrode in the conductance-voltage curves.

Published in:

Journal of Applied Physics  (Volume:105 ,  Issue: 7 )