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Browse Journals & Magazines > Journal of Applied Physics ...> Volume:105 Issue:7 Help

Theoretical model for the experimental magnetization data from the layered III-VI diluted magnetic semiconductor In1-xMnxSe (x=0.014 & 0.027)

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7 Author(s)
Meda, D. ; Department of Chemistry and Physics, University of North Florida, Jacksonville, Florida 32224, USA ; Blackburn, J.H. ; Maxwell, L. ; Garner, J.
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The magnetization of In1-xMnxSe is calculated and measured from 140 to 400 K in magnetic fields up to 7 T for two crystals with concentrations x=0.014 and 0.027. The Mn ions enter the InSe bulk crystal substitutionally at the In lattice site and are responsible for the observed magnetization of the sample. A singlet model of isolated Mn ions with a spin-orbit coupling parameter of 38 cm-1 fits the experimental data from two different concentration samples for temperatures ranging from 140 to 400 K in fields up to 7 T. This agreement between the experimental magnetization and the theoretical magnetization for In1-xMnxSe expands our theoretical understanding of the III-VI diluted magnetic semiconductor (DMS) by adding a Se-based system and complements previous agreement reported for only two other III-VI DMS (Ga1-xMnxS and In1-xMnxS).

Published in:
Journal of Applied Physics  (Volume:105 ,  Issue: 7 )

Date of Publication: Apr 2009

Page(s):
07C521 - 07C521-3
ISSN :
0021-8979
Digital Object Identifier :
10.1063/1.3076049
Product Type:
Journals & Magazines
Date of Current Version :
24 June 2009
Issue Date :
Apr 2009

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