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Raman analysis of longitudinal optical phonon-plasmon coupled modes of aligned ZnO nanorods

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10 Author(s)
Cheng, An-Jen ; Alabama Microelectronics Science and Technology Center, Department of Electrical and Computer Engineering, Auburn University, Auburn, Alabama 36849, USA ; Yonhua Tzeng ; Xu, Hui ; Alur, Siddharth
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The electronic properties of vertically aligned ZnO nanorods have been investigated using micro-Raman spectroscopy. The concentration and mobility of the charge carriers were determined via Raman line shape analysis using longitudinal-optical-phonon-plasmon coupled mode. The local laser heating and the stress effects have been considered when analyzing the Raman spectra. The mobility and carrier concentration of the aligned ZnO nanorods are 84.8 cm2/V s and 3.8×1017 cm-3, respectively. As a comparison, the mobility and carrier concentration of the undoped bulk ZnO were also obtained from the Raman line shape analysis. The mobility of the aligned ZnO nanorods is about 20% lower than that of the undoped bulk ZnO, which can be attributed to enhanced surface scattering due to the reduction in dimension.

Published in:

Journal of Applied Physics  (Volume:105 ,  Issue: 7 )