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Efficiency of light emission in high aluminum content AlGaN quantum wells

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8 Author(s)
Shatalov, M. ; Sensor Electronic Technology, Inc., 1195 Atlas Rd., Columbia, South Carolina 29209, USA ; Yang, J. ; Wenhong Sun ; Kennedy, Robert
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High quality multiple quantum well Al0.35Ga0.65N active layers with narrow wells designed for ultraviolet (UV) light-emitting diodes using the phonon engineering approach are characterized using quasi-steady-state and time-resolved photoluminescence spectroscopy. The photoluminescence intensity decrease with temperature increasing from 10 to 300 K was very small, and the upper limit of the internal quantum efficiency (IQE) of up to 70% was estimated based on this temperature dependence. Carrier lifetime measurements yielded the lower bound of the IQE to be ∼35% under optical pumping, whereas IQE of ∼25% was estimated from the measured external quantum efficiency and the light extraction efficiency calculated by ray tracing. The observed photoluminescence features and the high IQE are interpreted as a consequence of strong carrier (exciton) localization.

Published in:

Journal of Applied Physics  (Volume:105 ,  Issue: 7 )