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Stable p-type ZnO:P nanowire/n-type ZnO:Ga film junctions, reproducibly grown by two-step pulsed laser deposition

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9 Author(s)
Lorenz, Michael ; Institut für Experimentelle Physik II, Semiconductor Physics Group, Universität Leipzig, Linnéstr. 5, D-04103 Leipzig, Germany ; Bingqiang Cao ; Zimmermann, Gregor ; Biehne, Gisela
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.3086719 

ZnO p-n junctions were grown by two-step pulsed laser deposition (PLD) on a-plane sapphire substrates using a Ga-doped ZnO thin film as n-type conducting material. On top of these n-type films, phosphorous-doped ZnO (ZnO:P) nanowires were prepared by high-pressure PLD. Rectifying I-V curves with threshold voltage of about 3.2 V and a forward/reverse current ratio of 100 at ±3.5 V were measured reproducibly on these junctions. There are three independent indications for reproducible and about 1 year stable p-type conductivity of the ZnO:P wires: (1) Low-temperature cathodoluminescence of single ZnO:P nanowires exhibits phosphorus acceptor-related peaks: (A0,X), (e,A0), and donor-acceptor pair [B. Q. Cao etal, Nanotechnology 18, 455707 (2007)], (2) bottom-gate field effect transistors using undoped (n-type) ZnO and ZnO:P wires showed opposite transfer characteristics [B. Q. Cao etal, Phys. Status Solidi (RRL) 2, 37 (2008)], and (3) the rectifying I-V characteristics of the ZnO:P nanowire/ZnO:Ga-film junctions as shown here.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:27 ,  Issue: 3 )

Date of Publication:

May 2009

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