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Low-resistance, highly transparent, and thermally stable Ti/ITO Ohmic contacts to n-GaN

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4 Author(s)
Guo, H. ; Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown, West Virginia 26506 ; Brown, K. ; Korakakis, D. ; Cao, X.A.

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Indium tin oxide (ITO) contacts to n-GaN have been optimized to achieve the minimal contact resistance and high optical transparency. It was found that evaporation-deposited ITO on n-GaN exhibited leaky Schottky characteristics even with predeposition plasma treatment and postdeposition annealing. The addition of a thin intermediate Ti (3–20 nm thick) significantly improved the electrical characteristics, yet did not compromise the transparency of the ITO contacts. A thermally stable Ti/ITO Ohmic contact to n+-GaN, with a low specific contact resistance of 4.2×10-6 Ω cm2 and a high transmittance ∼86% at 450 nm, was obtained after 600 °C annealing.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:27 ,  Issue: 3 )