Cart (Loading....) | Create Account
Close category search window
 

Fabrication and characterization of the substrate-free InGaN-based resonant-cavity light-emitting diodes for plastic optical fiber communications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Tsai, Chia-Lung ; Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan, Taiwan ; Jia-Qing Lin ; Ju-Ping Huang

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.3119685 

In this article, the authors report on the realization of substrate-free InGaN-based thin-film resonant-cavity light-emitting diodes (TF-RCLEDs). Experimentally, the sapphire substrate was stripped by using the laser lift-off technique. The λ/4-thick Ta2O5/SiO2 distributed Bragg reflector and the metallic Ag film with mirror reflectivities of 68% and 97% were, respectively, coated onto the top and bottom of the substrate-free LEDs to form a Fabry–Pérot cavity. The performances of LEDs are characterized by light output power, external quantum efficiency, emission spectrum, angular-resolved intensity distribution, and dynamic response. As a result, the fabricated TF-RCLEDs exhibit a low operating voltage of 3.34 V at 20 mA, a maximum light output power of 6.3 mW at 140 mA, and an external quantum efficiency of 5.5% at 4 mA. In addition, the TF-RCLEDs show temperature insensitivity as compared to the normal LEDs directly grown on the sapphire substrates. Furthermore, the 50% viewing angle of TF-RCLED is smaller than that of normal LED, i.e., 146° versus 168° at 60 mA. Finally, the eye pattern of the TF-RCLEDs is improved compared to that of the normal LEDs as operated at the data transmission rate of 100 Mbit/s. These results exhibit that the InGaN-based TF-RCLEDs are excellent candidates for the use in short-distance plastic optical fiber communications.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:27 ,  Issue: 3 )

Date of Publication:

May 2009

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.