Electrical properties of metal-ferroelectric (PbZr_0.53Ti_0.47O₃)-polysilicon-insulator (Y₂O₃)-silicon capacitors and field-effect transistors

In this work, Al/PbZr_0.53Ti_0.47O₃(PZT)/n⁺-polysilicon/Y₂O₃/Si (MFPIS) capacitors and transistors were fabricated. A n⁺-polysilicon floating gate was used to reduce the depolarization field of the ferroelectric layer. The gate leakage current density was as low as 1.68×10^-10 A/cm² at 5 V. The I_DS-V_GS memory window shows a maximum of 2.5 V at a sweeping V_GS voltage range of 9 V. The subthreshold slope is 169 mV/decade. The I_DS-V_GS on and off ratio of MFPIS field effect transistor was about 10⁴. The MFPIS field effect transistors maintained a threshold voltage window of about 1.6 V after an elapsed time of 10⁴ s.