Cart (Loading....) | Create Account
Close category search window

Impact of nitridation on recoverable and permanent negative bias temperature instability degradation in high-k/metal-gate p-type metal oxide semiconductor field effect transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Aoulaiche, M. ; IMEC, Kapeldreef 75, B-3001 Leuven, Belgium and Department of Electrical Engineering, Katholieke Universiteit Leuven, Oude Markt 13, Bus 5005, 3000 Leuven, Belgium ; Kaczer, B. ; Roussel, P.J. ; OConnor, R.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Negative bias temperature instability is investigated on TaN metal-gated HfSiO(N) p-type metal oxide semiconductor field effect transistors. A previously developed measurement technique that allows to distinguish between the recoverable and the permanent components of the Vth shift is employed. When applied to nitrided and nonnitrided stacks, it is found that the permanent component is at most weakly influenced by the nitridation, while the recoverable component is strongly enhanced in the nitrided stacks. The nitrogen-related defect, which is responsible of the recoverable component increase, is clearly observed in the stress induced leakage current spectrum.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:27 ,  Issue: 1 )

Date of Publication:

Jan 2009

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.