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Impact of nitridation on recoverable and permanent negative bias temperature instability degradation in high-k/metal-gate p-type metal oxide semiconductor field effect transistors

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8 Author(s)
Aoulaiche, M. ; IMEC, Kapeldreef 75, B-3001 Leuven, Belgium and Department of Electrical Engineering, Katholieke Universiteit Leuven, Oude Markt 13, Bus 5005, 3000 Leuven, Belgium ; Kaczer, B. ; Roussel, P.J. ; OConnor, R.
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Negative bias temperature instability is investigated on TaN metal-gated HfSiO(N) p-type metal oxide semiconductor field effect transistors. A previously developed measurement technique that allows to distinguish between the recoverable and the permanent components of the Vth shift is employed. When applied to nitrided and nonnitrided stacks, it is found that the permanent component is at most weakly influenced by the nitridation, while the recoverable component is strongly enhanced in the nitrided stacks. The nitrogen-related defect, which is responsible of the recoverable component increase, is clearly observed in the stress induced leakage current spectrum.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:27 ,  Issue: 1 )

Date of Publication:

Jan 2009

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