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Browse Journals & Magazines > Journal of Vacuum Science & T ...> Volume:27 Issue:1 Help

Impact of a γ-Al2O3(001) barrier on LaAlO3 metal-oxide-semiconductor capacitor electrical properties

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8 Author(s)
Becerra, L. ; Institut des Nanotechnologies de Lyon, Université de Lyon, INL-UMR 5270, CNRS, Ecole Centrale de Lyon, 36 Avenue Guy de Collongue, Ecully F-69134, France ; Merckling, C. ; El-Kazzi, M. ; Baboux, N.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.3065437 

Amorphous LaAlO3 high-κ oxides were grown in a molecular beam epitaxy reactor on p-Si(001) employing a thin γ-Al2O3 epitaxial layer as buffer. Interfaces are free of SiO2 and silicates and remain abrupt even after high temperature annealing as demonstrated by x-ray photoelectron spectroscopy. Electrical measurements performed on as-deposited samples reveal dielectric constant values close to the bulk ones, small equivalent oxide thickness, and low interface state densities. Some negative charges are present leading to a flatband voltage shift. Postdeposition annealing can correct this effect.

Published in:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:27 ,  Issue: 1 )

Date of Publication: Jan 2009

Page(s):
384 - 388
ISSN :
1071-1023
Digital Object Identifier :
10.1116/1.3065437
Product Type:
Journals & Magazines
Date of Current Version :
24 June 2009
Issue Date :
Jan 2009

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