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Electrical characteristics of metal-ferroelectric (BiFeO3)-insulator (Y2O3)-semiconductor capacitors and field-effect transistors

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3 Author(s)
Lin, Chih-Ming ; Department of Electrical Engineering and Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan, Republic of China ; Wen-Chieh Shih ; Lee, Joseph Ya‐min

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.3058727 

Metal-ferroelectric-insulator-semiconductor (MFIS) capacitors and field effect transistors (FETs) with Al/BiFeO3/Y2O3/Si structure were fabricated. The capacitance-voltage (C-V) characteristics exhibit clockwise hysteresis loop due to the ferroelectric polarization of BiFeO3. The maximum C-V memory window was 0.88 V at a sweep voltage range of 5 V. Low leakage current density of 7×10-9 A/cm2 was measured at an applied voltage of 5 V using MFIS capacitors. The IDS-VDS and IDS-VGS characteristics of MFISFETs were measured. The subthreshold slope was 170 mV/dec and the maximum electron mobility was 155 cm2/V s.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:27 ,  Issue: 1 )

Date of Publication:

Jan 2009

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