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Study of metal oxide-semiconductor capacitors with rf magnetron sputtering TiOx and TiOxNy gate dielectric layer

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2 Author(s)
Albertin, K.F. ; LME, EPUSP, University of São Paulo, CEP 5424-970, CP61548 São Paulo, SP, Brazil ; Pereyra, I.

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Metal oxide-semiconductor capacitors with TiOx deposited with different O2 partial pressures (30%, 35%, and 40%) and annealed at 550, 750, and 1000 °C were fabricated and characterized. Fourier transform infrared, x-ray near edge spectroscopy, and elipsometry measurements were performed to characterize the TiOx films. TiOxNy films were also obtained by adding nitrogen to the gaseous mixture and physical results were presented. Capacitance-voltage (1 MHz) and current-voltage measurements were utilized to obtain the effective dielectric constant, effective oxide thickness, leakage current density, and interface quality. The results show that the obtained TiOx films present a dielectric constant varying from 40 to 170 and a leakage current density (for VG=-1 V, for some structures as low as 1 nA/cm2, acceptable for complementary metal oxide semiconductor circuits fabrication), indicating that this material is a viable, in terms of leakage current density, highk substitute for current ultrathin dielectric layers.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:27 ,  Issue: 1 )