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Effect of annealing and electrical properties of high-κ thin films grown by atomic layer deposition using carboxylic acids as oxygen source

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6 Author(s)
Rauwel, E. ; Department of Chemistry, CICECO, University of Aveiro, 3810-193 Aveiro, Portugal ; Ducroquet, F. ; Rauwel, P. ; Willinger, M.-G.
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Titania and hafnia thin films were deposited by atomic layer deposition using metal alkoxides and carboxylic acids as oxygen source. The effect of annealing under nitrogen on the densification of the films and on the resulting electrical properties is presented. The as-deposited and annealed films demonstrate good dielectric permittivity and low leakage current densities due to their purity and amorphous character.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:27 ,  Issue: 1 )

Date of Publication:

Jan 2009

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