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80 GHz field-effect transistors produced using high purity semiconducting single-walled carbon nanotubes

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7 Author(s)
Nougaret, L. ; Institut d’Electronique, de Microélectronique et de Nanotechnologie, UMR-CNRS 8520, BP 60069, Avenue Poincaré, 59652 Villeneuve d’Ascq Cedex, France ; Happy, H. ; Dambrine, G. ; Derycke, V.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3155212 

This paper presents the high frequency performance of single-walled carbon nanotube (SWNT) field-effect transistors, with channel consisting of dense networks of high purity semiconducting SWNTs. Using SWNT samples containing 99% pure semiconducting SWNTs, we achieved operating frequencies above 80 GHz. This record frequency does not require aligned SWNTs, thus demonstrating the remarkable potential of random networks of sorted SWNTs for high frequency electronics.

Published in:

Applied Physics Letters  (Volume:94 ,  Issue: 24 )

Date of Publication:

Jun 2009

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