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Growth and band alignment of epitaxial Ni metal gate on crystalline LaAlO3 (001) dielectric film

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8 Author(s)
Mi, Y.Y. ; European Synchrotron Radiation Facility, F-38043 Grenoble, Cedex, France ; Wang, S.J. ; Zegenhagen, J. ; Chai, J.W.
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An epitaxial Ni thin film is grown on a LaAlO3 single-crystalline thin film on Si (001). The p-type Schottky barrier height at the Ni/LaAlO3 interface is measured to be 2.88 eV by x-ray photoemission spectroscopy. The effective work function of the Ni film on LaAlO3 is determined to be 5.15 eV. Good epitaxial quality and a high effective work function suggest that Ni is a promising gate material integrated with LaAlO3 dielectric films for p-type metal oxide semiconductor field effect transistors.

Published in:

Applied Physics Letters  (Volume:94 ,  Issue: 24 )

Date of Publication:

Jun 2009

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