Cart (Loading....) | Create Account
Close category search window
 

Effects of solvents and vacancies on the electrical hysteresis characteristics in regioregular poly(3-hexylthiophene) organic thin-film transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Cheng, Horng-Long ; Institute of Electro-Optical Science and Engineering, Center for Micro/Nano Science and Technology, and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan ; Lin, Wei-Qi ; Wu, Fu-Chiao

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3148332 

The role of residual solvents and vacancies within poly(3-hexylthiophene) (P3HT) active layers, which are made from different boiling point (bp) solvents, on the electrical hysteresis characteristics of P3HT-based transistors was investigated. The improved electrical performance and reduced hysteresis of P3HT films, which are spin coated by high bp solvents, can be interpreted by superior crystalline quality and homogeneity and low vacancies. The hysteresis is dominated by the vacancy-related charge traps in the semiconductor created during film solidification and subsequence solvent evaporation. Furthermore, residual solvents, which initially occupied the vacancies, can contribute to conductivity of regioregular P3HT, thus altering electrical properties and smaller hysteresis.

Published in:

Applied Physics Letters  (Volume:94 ,  Issue: 22 )

Date of Publication:

Jun 2009

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.