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Browse Journals & Magazines > Applied Physics Letters ...> Volume:94 Issue:22 Help

Metal organic chemical vapor deposition of crack-free GaN-based light emitting diodes on Si (111) using a thin Al2O3 interlayer

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7 Author(s)
Fenwick, William E. ; School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0250, USA ; Melton, Andrew ; Tianming Xu ; Li, N.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3148328 

Crack-free GaN light emitting diodes (LEDs) have been grown by metal organic chemical vapor deposition on Si(111) substrates using an atomic layer deposition-grown Al2O3 interlayer. Devices on Si show a longer emission wavelength compared to those on sapphire. This is attributed to tensile strain in the layers on Si, which may increase indium incorporation. Internal quantum efficiency is similar on both substrates. Luminescence intensity versus current density measurements show higher efficiency for the LEDs on Si relative to sapphire at high drive currents. These results show comparable performance characteristics for GaN-based devices on Si and sapphire substrates.

Published in:
Applied Physics Letters  (Volume:94 ,  Issue: 22 )

Date of Publication: Jun 2009

Page(s):
222105 - 222105-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.3148328
Product Type:
Journals & Magazines
Date of Current Version :
24 June 2009
Issue Date :
Jun 2009

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