Referenced Items are not available for this document.
Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3143630
The temporal development of strain relaxation is monitored during and immediately after heteroepitaxy by x-ray diffraction with high resolution in strain and time. ZnSe layers on (001)GaAs with thicknesses just a little above the onset of plastic relaxation reveal inhomogeneous, partial relaxation which continues with a time constant of 50 s immediately after the stop of layer growth. A model of generation, glide, and blocking of dislocations well explains the observation that the degree of relaxation finally reached after growth stop is determined by the density of dislocations rapidly generated prior to it.
Published in:
Applied Physics Letters
(Volume:94
,
Issue:
21
)
Date of Publication: May 2009
- Page(s):
- 211905 - 211905-3
- ISSN :
- 0003-6951
- Digital Object Identifier :
- 10.1063/1.3143630
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 24 June 2009
- Issue Date :
- May 2009
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
