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Evidence of nanosecond-scale charge injection during domain switching from fast imprint measurements in Pb(Zr,Ti)O3 thin films at low temperatures

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3 Author(s)
Jiang, A.Q. ; Department of Microelectronics, ASIC and System State Key Laboratory, Fudan University, Shanghai 200433, People''s Republic of China ; Yu, H.H. ; Tang, T.A.

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Fast imprint measurements of coercive voltages from domain switching current after various dc biasing voltages at low temperatures evidence multilevel interfacial charge injections in Pt/IrO2/Pb(Zr0.4Ti0.6)O3/IrO2/Pt thin-film capacitors with suppressed thermal noises. Initially, a quick charge injection occurs during domain switching with injection current equal to domain switching current. After completion of polarization reversal, a slow charge injection continues with ultimate injected charge density nearly independent of biasing voltages at 77.6 K. This is very different from normal observations of a semilogarithmic time dependence of the coercive voltage at room temperature above 1 μs.

Published in:

Applied Physics Letters  (Volume:94 ,  Issue: 20 )

Date of Publication:

May 2009

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