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Backside observation of large-scale integrated circuits with multilayered interconnections using laser terahertz emission microscope

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8 Author(s)
Yamashita, M. ; RIKEN, 519-1399 Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-845, Japan ; Otani, C. ; Kawase, K. ; Matsumoto, T.
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We have developed a laser terahertz emission microscope utilizing excitation laser pulses at 1.06 μm wavelength for the inspection and localization of electrical failures in large-scale integrated circuits with multilayered interconnection structures. The system enables to measure terahertz emission images from the backside of a large-scale integrated circuits chip with a multilayered interconnection structure that prevents the observation from the front side. By comparing the terahertz emission images, we successfully distinguish a normal circuit from damaged ones with different positions of the interconnection defects without any electrical probing.

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Applied Physics Letters  (Volume:94 ,  Issue: 19 )