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6H-SiC JFETs for 450 ^{\circ}\hbox {C} Differential Sensing Applications

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5 Author(s)
Patil, A.C. ; Electron. Miniaturization Lab., Gen. Electr. Global Res., Niskayuna, NY, USA ; Xiao-An Fu ; Anupongongarch, C. ; Mehregany, M.
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N-channel 6H-SiC depletion-mode junction field-effect transistors (JFETs) have been fabricated, and characterized for use in high-temperature differential sensing. Electrical characteristics of the JFETs have been measured and are in good agreement with predictions of an abrupt-junction long-channel JFET model. The electrical characteristics were measured across a 2-in wafer for temperatures from 25degC to 450degC, and the extracted pinchoff voltage has a mean of 11.3 V and a standard deviation of about 1.0 V at room temperature, whereas pinchoff current has a mean of 0.41 mA with standard deviation of about 0.1 mA. The change in pinchoff voltage is minimal across the measured temperature range, whereas pinchoff current at 450degC is about half its value at room temperature, consistent with the expected change in the nmun product. The characterization of differential pairs and hybrid amplifiers constructed using these differential pairs is also reported. A three-stage amplifier with passive loads has a differential voltage gain of 50 dB, and a unity-gain frequency of 200 kHz at 450degC, limited by test parasitics. A two-stage amplifier with active loads has reduced sensitivity to off-chip parasitics and exhibits a differential voltage gain of 69 dB with a unity-gain frequency of 1.3 MHz at 450degC.

Published in:

Microelectromechanical Systems, Journal of  (Volume:18 ,  Issue: 4 )