By Topic

Sub-ppm NO2 detection by Al2O3 contact passivated carbon nanotube field effect transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
7 Author(s)
Mattmann, Moritz ; Department of Mechanical and Process Engineering, Micro and Nanosystems, ETH Zurich, 8092 Zurich, Switzerland ; Helbling, Thomas ; Durrer, L. ; Roman, C.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3125259 

We investigate carbon nanotube field effect transistors (CNFETs) with aluminum oxide (Al2O3) passivated contacts for NO2 detection. For the CNFETs, consisting of one individual pristine single walled carbon nanotube (SWNT), the measurements indicate a strong influence of adsorbed NO2 gas molecules on the exposed CNFET channel and NO2 concentrations as low as 100 ppb were detected. Applied to the contact-SWNT interfaces, Al2O3 is a suitable material to protect the metal contacts from NO2 molecules and other undesired environmental influences. We discuss the effect of the different processing steps on the CNFET characteristics and show device recovery after short heat treatment.

Published in:

Applied Physics Letters  (Volume:94 ,  Issue: 18 )