By Topic

Enhancement of the magnetic field sensitivity in Al2O3 encapsulated NiFe films with anisotropic magnetoresistance

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
9 Author(s)
Ding, Lei ; Department of Materials Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083, People''s Republic of China ; Teng, Jiao ; Zhan, Qian ; Feng, Chun
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3123807 

The anisotropic magnetoresistance value (ΔR/R) and magnetic field sensitivity (Sv) of NiFe films can be remarkably enhanced by using Al2O3 encapsulation, and the Sv is comparable to that of a spin valve. For an ultrathin NiFe film with the structure of Ta/Al2O3/NiFe/Al2O3/Ta, the Al2O3 layers suppress the formation of the magnetic dead layers and the interdiffusions between the NiFe layer and Ta layers, and decrease the current shunting of the Ta layers. More importantly, the flatter Al2O3/NiFe and NiFe/Al2O3 interfaces can significantly enhance the specular reflection of conduction electrons and lead to a higher ΔR/R. In addition, the formations of the NiFe (111) texture and the columnar grains by annealing can also increase the ΔR/R.

Published in:

Applied Physics Letters  (Volume:94 ,  Issue: 16 )