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Effect of In–Ga intermixing on the electronic states in self-assembled InAs quantum dots probed by nanogap electrodes

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5 Author(s)
Shibata, K. ; Institute of Industrial Science and Institute for Nano Quantum Information Electronics, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan and CREST-JST, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan ; Jung, M. ; Cha, K.M. ; Sotome, M.
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We have investigated the effect of In–Ga intermixing on the electronic states in single self-assembled InAs quantum dots (QDs) coupled to nanogap metallic electrodes. The orbital quantization energies of the QDs and the tunnel resistances exhibited a strong dependence on growth temperature, TG, due to In–Ga intermixing during QD formation. When the intermixing was suppressed by reducing TG to 470 °C, the electron wave functions in the QDs become more extended in space and QD-electrode coupling sufficiently strong to form the Kondo singlet states at 4.3 K was realized even in a small QD of ∼45 nm diameter.

Published in:

Applied Physics Letters  (Volume:94 ,  Issue: 16 )

Date of Publication:

Apr 2009

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