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Amorphous silicon thin-film transistors with field-effect mobilities of 2 cm2/Vs for electrons and 0.1 cm2/Vs for holes

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4 Author(s)
Lin Han ; Department of Electrical Engineering and Princeton Institute for the Science and Technology of Materials, Princeton University, Princeton, New Jersey 08544, USA ; Mandlik, Prashant ; Cherenack, Kunigunde H. ; Wagner, S.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3119636 

A new gate dielectric material is used to fabricate hydrogenated amorphous-silicon (a-Si:H) thin-film transistors (TFTs) with high field-effect mobilities. The dielectric is a homogeneous SiO2-silicone hybrid, which is deposited by plasma-enhanced chemical vapor deposition system at nominal room temperature. This new dielectric results in a-Si:H TFTs with measured field-effect mobilities of ∼2 cm2/Vs for electrons and ∼0.1 cm2/Vs for holes.

Published in:

Applied Physics Letters  (Volume:94 ,  Issue: 16 )

Date of Publication:

Apr 2009

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