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Growth of high quality N-polar AlN(0001) on Si(111) by plasma assisted molecular beam epitaxy

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4 Author(s)
Dasgupta, S. ; Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA ; Wu, F. ; Speck, J.S. ; Mishra, U.K.

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High quality N-polar AlN epilayers were grown and characterized on Si(111) substrates by plasma assisted molecular beam epitaxy as a first step toward growth of N-polar nitrides on Si(111). Polarity inversion to N-face by an optimized predeposition of Al adatoms on the reconstructed 7×7 Si(111) surface was investigated. Al adatoms can saturate the dangling bonds of Si atoms, resulting in growth of AlN in (0001) direction on subsequent exposure to N2 plasma. N-polarity was confirmed by observing strong 3×3 and 6×6 reflection high-energy electron diffraction reconstructions, convergent beam electron diffraction imaging and KOH etching studies. The structural properties were investigated by x-ray diffraction measurements, cross section and plan-view TEM studies.

Published in:

Applied Physics Letters  (Volume:94 ,  Issue: 15 )

Date of Publication:

Apr 2009

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