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Electron scattering due to dislocation wall strain field in GaN layers

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1 Author(s)
Krasavin, S. ; Bogoliubov Laboratory of Theoretical Physics, Joint Institute for Nuclear Research, Dubna, Moscow Region 141980, Russia

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3147744 

The effect of edge-type dislocation wall strain field on the Hall mobility in n-type epitaxial GaN was theoretically investigated through the deformation potential within the relaxation time approximation. It was found that this channel of scattering can play a considerable role in the low temperature transport at the certain set of the model parameters. The low temperature experimental data were fitted by including this mechanism of scattering along with ionized impurity and charge dislocation ones.

Published in:

Journal of Applied Physics  (Volume:105 ,  Issue: 12 )

Date of Publication:

Jun 2009

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