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Browse Journals & Magazines > Applied Physics Letters ...> Volume:94 Issue:25 Help

Direct measurement of transient electric fields induced by ultrafast pulsed laser irradiation of silicon

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2 Author(s)
Park, H. ; Department of Materials Science and Engineering and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA ; Zuo, J.M.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3157270 

We use 30 kV electron pulses to probe transient electric fields above silicon surfaces by pump-probe. Electron beam deflection at 0.29 mm away from the sample surface on the order of 10-2 degrees is measured as a function of time delay and used to measure the local electric fields. The measured field strength and direction change with time; at the pump laser fluence of 67.7 mJ/cm2, the maximum field reaches 34 kV/m. We model the transient electric fields based on the propagation of electrons emitted from the Si surface and the percentage of electrons escaping from the surface.

Published in:
Applied Physics Letters  (Volume:94 ,  Issue: 25 )

Date of Publication: Jun 2009

Page(s):
251103 - 251103-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.3157270
Product Type:
Journals & Magazines
Date of Current Version :
24 June 2009
Issue Date :
Jun 2009

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