By Topic

Effect of Hydrostatic Pressure on the Emission from Gallium Arsenide Lasers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Fenner, G.E. ; General Electric Research Laboratory, Schenectady, New York

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The pressure shift of both the coherent and the incoherent emission of GaAs junction lasers has been measured at about 200°K. The peak of the spontaneous emission shifts by +1.09×10-5 eV/atm, which is in agreement with the pressure coefficient of the band gap in GaAs determined by experiments based on the change of resistance under pressure. The shift of the coherent modes is much smaller, namely, +2.96×10-6 eV/atm. The effect of the compressibility on the latter shift is shown to be negligible. It is concluded from considerations of a simple model that the shift of the coherent radiation is primarily due to a change of the dielectric constant with pressure.

Published in:

Journal of Applied Physics  (Volume:34 ,  Issue: 10 )