By Topic

Transport Properties of Bismuth Single Crystals

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
3 Author(s)
Gallo, C.F. ; Westinghouse Research Laboratories, Pittsburgh 35, Pennsylvania ; Chandrasekhar, B.S. ; Sutter, P.H.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1729056 

The absolute Seebeck coefficient, electrical resistivity, and thermal resistivity were simultaneously measured on pure bismuth single crystals of various orientations between approximately 80° and 300°K. Using an overlapping two‐band many‐valley model, numerical values for the temperature dependence and anisotropy (where appropriate) of the following parameters have been calculated: (1) the overlap energy and the Fermi energy of the electrons and of the holes, (2) the density of states effective mass of the electrons and of the holes, (3) the separate electronic and lattice thermal conductivities, (4) the actual index of thermo‐electric efficiency, and (5) the hypothetical ``optimum'' index of thermoelectric efficiency. The calculated electronic thermal conductivity includes a new term due to bipolar diffusion.

Published in:

Journal of Applied Physics  (Volume:34 ,  Issue: 1 )